| abstract |
A method of fabricating a semiconductor device according to an embodiment of the present invention includes sequentially forming an n-type epitaxial layer, a p-type epitaxial layer and an n + region on a first surface of an n + -type silicon carbide substrate, Forming a buffer layer pattern that is located below the photoresist pattern and exposes a portion of the n + region by etching the buffer layer using the photoresist pattern as a mask, exposing the exposed n + region and the photoresist pattern Forming a first metal layer and a second metal layer, the first metal layer and the second metal layer including a first portion located on the n + region and a second portion located on the photoresist pattern, a buffer layer pattern, a photoresist pattern, Exposing a portion of the n + region by removing the second portion of the first metal layer and exposing the first portion of the first metal layer and the first portion of the second metal layer as a mask, And forming a trench, wherein the trench penetrates the n + region and the p-type epilayer and is formed in the n-type epilayer. |