| abstract |
An apparatus and a method for processing a substrate in accordance with a PECVD process are described. In order to vary the deposition rate profile across the substrate, the temperature profile of the substrate is adjusted. In order to vary the deposition rate profile across the substrate, the plasma density profile is adjusted. To reduce the formation of low quality deposits on the chamber surfaces and to improve plasma density uniformity, the chamber surfaces exposed to the plasma are heated. In situ metrology can be used to monitor the progress of the substrate temperature profile, plasma density profile, pressure, temperature, and trigger control actions that involve the flow of reactants, and the deposition process. |