http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150107180-A

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filingDate 2014-03-13^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e860381083689981ce91789f69f2cc53
publicationDate 2015-09-23^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150107180-A
titleOfInvention Semiconductor Apparatus and Method for manufacturing the same
abstract The present invention provides a buried word line and a semiconductor device using the same and a method of manufacturing the same. The semiconductor device according to the present invention includes a semiconductor substrate having a trench, a gate insulating film located on a bottom surface and a side wall of the trench, A first gate located above the gate insulating film, a second gate located above the first gate, and a multi-film located between the gate insulating film and the second gate.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190032683-A
priorityDate 2014-03-13^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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