| abstract |
The present disclosure provides complementary metal oxide semiconductor (CMOS) image sensor (CIS) devices. According to some embodiments, the device comprises: a semiconductor region having a front surface and a back surface; A photosensitive region extending in the semiconductor region from the front surface to the rear surface; A gate stack formed over the semiconductor region; And at least one epitaxial passivation layer disposed on at least one of the upper and lower light-sensitive regions. In some embodiments, the at least one epitaxial passivation layer comprises a p-type doped silicon (Si) layer. |