| abstract |
The IC device fabrication process first performs planar recession of a material whose height varies across the substrate. The method includes forming a polymer coating, a CMP step of forming a plane, and a plasma etching step of performing planarization of the polymer coating. The material may be recycled with the polymer coating, or, subsequently, the reclaimed polymer coating provides the mask. All material layers above a certain height are removed. Structures that are substantially lower than the predetermined height may be protected from contamination and may be intact and left. The polymer may be a photoresist. By evacuating the bake chamber through a two-step bake process and below the substrate, the polymer can be provided with suitable adhesion and uniformity for the CMP process. |