http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170044418-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1438
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11578
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
filingDate 2015-10-15^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca083c530414606d359f2dee536b82e5
publicationDate 2017-04-25^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20170044418-A
titleOfInvention Semiconductor device and manufacturing method of the same
abstract A semiconductor device according to an embodiment of the present invention includes: a first laminate in which a first interlayer insulating film and first conductive patterns are alternately laminated; A second laminate disposed on the first laminate and having a second interlayer insulating film and second conductive patterns alternately stacked; Columnar structures passing through the first and second stacks; And ring patterns disposed between the first and second stacks to surround the columnar structures, respectively.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190001637-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190092808-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109148462-A
priorityDate 2015-10-15^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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