| abstract |
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate including a first region and a second region located on both sides of the first region, a first trench formed in the first region, a buffer layer filling a portion of the first trench, A first semiconductor layer formed on the buffer layer, a second semiconductor layer which forms a heterojunction with the first semiconductor layer on the first semiconductor layer of the first region, and a second semiconductor layer which forms a heterojunction with the first semiconductor layer, And a gate electrode formed on the layer. |