| abstract |
It is an object of the present invention to provide a highly reliable semiconductor device having good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and has an ab plane parallel to the surface And the portion excluding the acicular crystal group is an amorphous region or a mixed region of amorphous and microcrystallites. Thus, a highly reliable semiconductor device having good electrical characteristics can be formed. |