http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180000735-A

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filingDate 2016-05-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b07dbabf431b0aa61b2036afb3df702c
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publicationDate 2018-01-03^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20180000735-A
titleOfInvention A photovoltaic cell including a field emitter array on a silicon substrate having a boron layer
abstract The photoelectrode uses a field emitter array (FEA) formed integrally on the silicon substrate to improve photoelectron emission, and a thin boron layer disposed directly on the outer surface of the FEA to prevent oxidation. The field emitter is formed by protrusions having various shapes (e.g., pyramid or rounded whisker) arranged in a two-dimensional periodic pattern and can be configured to operate in a reverse bias mode. An optional gate layer is provided to control the emission current. A selective second boron layer is formed on the illumination (top) surface, and a selective anti-reflection material layer is formed on the second boron layer. An optional external potential is generated between the illumination surface and the outer surface on both sides. An optional combination of an n-type silicon field emitter and a p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photoelectric cathode forms part of the sensor and inspection system.
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