| abstract |
The present invention provides a GaN substrate comprising a substrate, a GaN layer provided on the substrate, a patterned graphene layer provided on a part of the upper portion of the GaN layer, and a patterned graphene layer (Ga, In) -based nitride formed on the GaN layer and the patterned graphene layer and formed on the patterned graphene layer, and a (Ga, In) -based nitride formed on the patterned graphene layer, (Ga, In) nitride are different from each other and a manufacturing method thereof. According to the present invention, the graphene layer transferred by the wet process method is patterned, and the patterned graphene layer can serve as a path for electrons to move to the counter electrode, and the current The overcorrection problem can be solved and the photocurrent can be improved by increasing the surface area of the (Ga, In) type nitride grown in the three-dimensional form. |