| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f90bef5e4eea79269d893d138eda905 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-70 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-984
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-956
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36 |
| filingDate |
2016-08-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03a965c8b57c9362e3608adbd810df04 |
| publicationDate |
2018-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180020442-A |
| titleOfInvention |
Silicon carbide material and silicon carbide composite |
| abstract |
More particularly, the present invention relates to a SiC material and a SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak calculated according to the following formula (1) is less than 1.5. The present invention can provide an SiC material and an SiC composite material that can be uniformly etched upon exposure to a plasma to lower the occurrence of cracks and holes. [Formula 1] Diffraction intensity ratio (I) = ((200) plane peak intensity + (220) plane peak intensity) / (111) plane peak intensity |
| priorityDate |
2016-08-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |