| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11a94a4328794cd0957865c96834edfc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68728
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2016-10-06^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6682d1fd3d3c45a5aed839bea77e24e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e93b921d9368059b8c4094be7ffc0eba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20edae09f310bb1e7f9ce5f5708e34d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cb0942e982b95c396c03ec6a61cf34b |
| publicationDate |
2018-06-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180059436-A |
| titleOfInvention |
Heat treatment vessel and etching method of single crystal silicon carbide substrate |
| abstract |
The heat treatment vessel 1 is provided with a support member 6 for supporting the SiC substrate 2 when etching a disc-shaped SiC substrate 2 as an object. The support member 6 has an inclined surface 6F inclined to support the end 2E of the lower surface of the SiC substrate 2 so as to approach the center line of the SiC substrate 2 as it goes down. More specifically, the support member 6 is formed into a conical shape having a larger diameter as it goes downward, and the conical surface as its peripheral surface forms the inclined surface 6F. The upper and lower portions of the inclined surface 6F come into contact with the end 2E of the lower surface of the SiC substrate 2. |
| priorityDate |
2015-10-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |