http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180096086-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-2605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-26 |
| filingDate | 2017-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e77860b321ffb7a86d77709cd3b75a81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3155b0c2ffeffc4104e0f38ac725f43 |
| publicationDate | 2018-08-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180096086-A |
| titleOfInvention | Method for analysing character of negative capacitance semiconductor device and electric circuit simulating method |
| abstract | A method for analyzing characteristics of a negative capacitance semiconductor device including a semiconductor element and a ferroelectric negative capacitor connected to the semiconductor element and having a negative capacitance, includes the steps of: determining a gate-source voltage (V GS) applied to the ferroelectric negative capacitor A second step of calculating an internal voltage of the ferroelectric negative capacitor based on the gate-source voltage and the property information, a second step of calculating an internal voltage of the ferroelectric negative capacitor based on the gate-source voltage and the property information, A third step of calculating a channel surface voltage of the ferroelectric negative capacitor based on the information and the internal voltage, and a third step of calculating a drain current I D according to a gate-source voltage applied to the ferroelectric negative capacitor based on the channel surface voltage Calculating And a fourth step. |
| priorityDate | 2017-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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