| abstract |
The present invention provides a method of forming ohmic contact and ohmic contact between a semiconductor and a metal, comprising the steps of: stacking a nickel layer on a silicon carbide substrate; Depositing a titanium layer on top of the nickel layer; And forming a nickel / titanium ohmic contact through heat treatment. As a result, the ohmic contact of the present invention is easy to form nickel suicide through the excellent reactivity with silicon carbide, and the formation of carbon clusters is prevented, so that the effect of having a uniform interface can be obtained. |