| abstract |
The present invention provides a chemical mechanical planarization (CMP) formulation that provides a high, tunable Cu removal rate and low copper dishing for a broad or advanced node copper or penetrating silica vias (TSV). CMP compositions provide high selectivity of Cu films for other barrier layers such as Ta, TaN, Ti and TiN, and dielectric films such as TEOS, low-k and ultra low-k films. The CMP abrasive agent comprises at least a triple chelator selected from the group consisting of solvents, abrasives, amino acids, amino acid derivatives, organic amines, and combinations thereof; At least one chelator is an amino acid or an amino acid derivative. In addition, organic quaternary ammonium salts, corrosion inhibitors, oxidants, pH adjusters and biocides are used in the formulation. |