http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190026472-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2017-09-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae767db2f25ec906bce90e4cf8ddf046 |
| publicationDate | 2019-03-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20190026472-A |
| titleOfInvention | Epitaxial wafer and method for fabricating the same |
| abstract | An embodiment includes a substrate; A first layer disposed on the substrate; A buffer layer disposed on the first layer; And an epi layer disposed on the buffer layer, wherein the substrate, the first layer, the buffer layer, and the epi layer include silicon carbide and a dopant, wherein the first layer has a concentration of the dopant Wherein the concentration of the dopant in the first layer is smaller than the concentration of the dopant in the substrate, and the concentration of the dopant in the first- The minimum concentration of the dopant in the two layers is the same as the concentration of the dopant in the first layer, and the peak concentration of the dopant in the first-first layer is the same as the concentration of the dopant in the buffer layer. |
| priorityDate | 2017-09-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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