| abstract |
The present disclosure generally relates to systems and methods for reducing combustion of waste gases formed during the manufacture of semiconductor wafers. In particular, the systems described herein provide greater efficiency and lower energy use than conventional abatement systems, such as silane (SiH 4 ) and tetraethoxysilane (Si (OC 2 H 5 ) 4 , abbreviated as TEOS). Combustion of air-contaminated perfluorocarbons, including those having high greenhouse gas indices such as hexafluoroethane (C 2 F 6 ) and tetrafluoromethane (CF 4 ), as well as particulate-forming silicon dioxide precursors You can. More specifically and in one preferred embodiment, the present disclosure utilizes a combination of incombustible and combustible gases (or gas mixtures) for thermal combustion, directed through a plurality of permeable inner surfaces of the reaction chamber, waste gas. And to a waste gas abatement system that efficiently burns and prevents undesirable accumulation of solid particulate material on chamber surfaces. |