| abstract |
A plasma-enhanced chemical vapor deposition (PECVD) apparatus is configured to deposit a plurality of film layers on a substrate without exposing the substrate to vacuum disruption between film deposition steps. The plasma-enhanced chemical vapor deposition apparatus is fluidly connected to a process station configured for deposition of a first film and a second film on a substrate, a plasma source configured to supply plasma to the process station, and a gas inlet of the process station. A process station reactant supply. |