http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200078835-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9c8be5926503f1c3cb4dbcce92afd13 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-40 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-963 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-963 |
filingDate | 2018-12-24^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54f43cb852054474e63dcbe35974e518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b12f842ca8225c416d97100a7ddc852d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fc974c6d9def98b02125a67e152f8ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54d0093e69f0639af1ce84dfa0c76a0e |
publicationDate | 2020-07-02^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20200078835-A |
titleOfInvention | Method for preparation of vanadium-doped silicon carbide powder and silicon carbide powder thereby, electrically insulated heat radiating filler using the same |
abstract | The present invention comprises the steps of (I) mixing silicon powder, carbon black powder and vanadium metal powder, followed by primary heat treatment at 1,350 to 1,800°C; (II) after the first heat treatment, a second heat treatment at 1,800 ~ 2,000 ℃; And (III) after the second heat treatment, performing a decarburization process at 600 ~ 1,000 ℃; provides a method for producing a vanadium-doped silicon carbide powder comprising a. According to the present invention, it is possible to obtain a vanadium-doped silicon carbide powder in which vanadium is uniformly distributed in a silicon carbide lattice by a direct carbonization method, and also by using a vanadium-doped silicon carbide powder obtained according to the production method of the present invention 1 By showing a high resistance value of x 10 11 Ωcm or more, it is possible to provide a heat dissipation filler that satisfies both excellent thermal conductivity and insulation. |
priorityDate | 2018-12-24^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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