http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210009443-A

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filingDate 2019-06-19^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2c4826c60947fcbc3fb8461c0bcf783
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publicationDate 2021-01-26^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20210009443-A
titleOfInvention Carbon gapfill films
abstract Methods for forming flowable carbon layers on a semiconductor substrate are described. To form a flowable carbon film on the substrate, local excitation (eg, plasma in PECVD) may be applied to the carbon-containing precursor, as described herein. It has been found that the remote excitation method also excites the stable precursor to produce a radical precursor that is subsequently bonded with an unexcited carbon-containing precursor in the substrate processing zone, thereby producing flowable carbon films. Optional post-deposition plasma exposure can also cure or solidify the flowable film after deposition. Methods for forming air gaps using the flowable films described herein are also described.
priorityDate 2018-06-20^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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