abstract |
Methods for forming flowable carbon layers on a semiconductor substrate are described. To form a flowable carbon film on the substrate, local excitation (eg, plasma in PECVD) may be applied to the carbon-containing precursor, as described herein. It has been found that the remote excitation method also excites the stable precursor to produce a radical precursor that is subsequently bonded with an unexcited carbon-containing precursor in the substrate processing zone, thereby producing flowable carbon films. Optional post-deposition plasma exposure can also cure or solidify the flowable film after deposition. Methods for forming air gaps using the flowable films described herein are also described. |