| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2020-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efddcfb4c0d809dc02c4d2913f96f10c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6d1d0029777d70127fc12bb40fcaccc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2d5ac143d403563e13305a692b3cdcf |
| publicationDate |
2021-10-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210120073-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing apparatus and program |
| abstract |
A technology capable of forming a low-resistance film is provided. A first process including a first process of supplying a reducing gas containing silicon and hydrogen and not containing halogen to the substrate in the processing chamber in parallel with supply of the metal-containing gas; and the supply of the metal-containing gas is stopped; a second process of maintaining the supply of the reducing gas and a third process of supplying an inert gas into the processing chamber while stopping the supply of the reducing gas to maintain a pressure equal to the pressure of the second process or to adjust the pressure to a different pressure; It has a process of sequentially repeating a 2nd process and a 3rd process of supplying nitrogen-containing gas with respect to a board|substrate. |
| priorityDate |
2019-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |