| abstract |
A method of manufacturing a field effect transistor comprising a source electrode and a drain electrode, a gate electrode, an active layer, and a gate insulating layer, the method comprising the step of etching the gate insulating layer, the gate insulating layer comprising an element A and an element B and at least one selected from element C, element A is at least one selected from Sc, Y, Ln (lanthanide element), Sb, Bi, and Te, and element B is Ga, Ti, Zr , and at least one selected from Hf, the C element is at least one selected from the group 2 element of the periodic table, and when at least one selected from a source electrode and a drain electrode, a gate electrode, and an active layer is formed, the etching solution A is and etching solution B, which is an etching solution having the same type as etching solution A when the gate insulating layer is etched, is used. |