| abstract |
SUMMARY OF THE INVENTION It is an object of the present invention to provide a highly reliable semiconductor device having good electrical characteristics, and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and forms an ab plane parallel to the surface. Including and excluding the needle-shaped crystal group, the region is an amorphous region or a region in which amorphous and microcrystals are mixed. Accordingly, a highly reliable semiconductor device having good electrical properties can be formed. |