patent/KR-20220085805-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220085805-A

Outgoing Links

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filingDate	2020-10-22^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4a175198c7d61641bd0068b4e6f86fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8203eac8a48c74e4aeebf059e46d744 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_600c83f2e38bae604b3073edf8cc5551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_555895840a775e3d3596c81df5cbe6a2
publicationDate	2022-06-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	KR-20220085805-A
titleOfInvention	Methods for GAA I/O Formatting by Selective EPI Regrowth
abstract	Electronic devices having fin-like structures for gate all-around non-I/O devices and I/O devices and methods of forming electronic devices are described. A plurality of dummy gates are etched to expose a fin comprising alternating layers of a first material and a second material. The second material layers are removed to create openings, and the remaining first material layers are epitaxially grown to form a fin-like structure.
priorityDate	2019-10-22^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

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