| abstract |
Approaches for reducing particle generation in electrostatic lenses are provided herein. In some embodiments, the ion implantation system can include an electrostatic lens comprising an inlet for receiving the ion beam and an outlet for directing the ion beam towards a target, the electrostatic lens being along a first side of the ion beamline. a first terminal electrode disposed thereon, a first suppression electrode, and a first ground electrode, wherein the first ground electrode is grounded and positioned adjacent the outlet. The electrostatic lens may further include a second terminal electrode disposed along a second side of the ion beamline, a second suppression electrode, and a second ground electrode, wherein the second ground electrode is grounded and positioned adjacent the outlet. The implantation system may further include a power supply operable to supply voltage and current to the electrostatic lens to control the ion beam. |