http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220137920-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_950bce8d103dab1bd282965fde47f9f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31705 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-08 |
| filingDate | 2021-02-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc6fbf60c5aea2fcc4820680313205cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be750dd9e06086accd1bd9b95c41e787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d63170ff95558a93ef8a2569e0f36fd7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c6c1c6a717abd6eb3f629bacc437b5f |
| publicationDate | 2022-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20220137920-A |
| titleOfInvention | Apparatus and method for controlling metal contamination of ion implantation system using charge stripping mechanism |
| abstract | A method of implanting high charge state ions into a workpiece while mitigating trace metal contamination comprises generating desired ions of a first charge state from a desired species in an ion source, and extracting trace metal ions of the contaminant species within a first ion beam. comprising the steps of creating The charge-to-mass ratio of the desired ions and the trace metal ions is the same. The desired ions and trace metal ions are extracted from the ion source. Stripping one or more electrons from the desired ions to form a second ion beam of the desired ions and the trace metal ions in a second charge state. Only the desired ions in the second ion beam are selectively passed through a charge selector to form a final ion beam of desired ions and trace metal ions in the second charge state, wherein the desired ions in the second charge state are removed from the workpiece. injected into |
| priorityDate | 2020-02-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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