Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S134-902 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B1-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24D3-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-08 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24D3-32 |
filingDate |
1995-05-17^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
1996-01-25^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-960000319-A |
titleOfInvention |
Workpiece cleaning method and device |
abstract |
The semiconductor wafer is cleaned by a cleaning member made of polyurethane as a main material and having fine pores on the surface in contact with the semiconductor wafer. The pores already have an average diameter in the range of 10 to 200 μm. The cleaning member may be made of one of a nonwoven fabric or a polyurethane composed of oils mutually bonded by a urethane resin. Particles strongly adhered to the surface of a substrate such as a semiconductor wafer can be easily removed by cleaning. At the same time as the substrate is cleaned, surface irregularities and crystal protrusions on the surface of the substrate, such as the semiconductor wafer, are removed, so that the surface roughness of the semiconductor wafer can be adjusted to a predetermined level in order to flatten the surface of the semiconductor wafer. |
priorityDate |
1994-06-28^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |