http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-960000319-A

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S134-902
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B1-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24D3-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-08
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24D3-32
filingDate 1995-05-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1996-01-25^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-960000319-A
titleOfInvention Workpiece cleaning method and device
abstract The semiconductor wafer is cleaned by a cleaning member made of polyurethane as a main material and having fine pores on the surface in contact with the semiconductor wafer. The pores already have an average diameter in the range of 10 to 200 μm. The cleaning member may be made of one of a nonwoven fabric or a polyurethane composed of oils mutually bonded by a urethane resin. Particles strongly adhered to the surface of a substrate such as a semiconductor wafer can be easily removed by cleaning. At the same time as the substrate is cleaned, surface irregularities and crystal protrusions on the surface of the substrate, such as the semiconductor wafer, are removed, so that the surface roughness of the semiconductor wafer can be adjusted to a predetermined level in order to flatten the surface of the semiconductor wafer.
priorityDate 1994-06-28^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457765275
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID21225539
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID313
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID222
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449831254
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID784
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419550829
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557048

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