http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-970008409-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-974 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24C1-003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24C1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24C3-322 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24C3-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 1996-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-02-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-970008409-A |
| titleOfInvention | Interlayer dielectric planarization method and apparatus |
| abstract | There is provided a method for planarizing an interlayer dielectric layer of an integrated circuit device in a semiconductor device in which the processing speed can quickly rewrite the remainder of the dielectric layer without removing the surface of the dielectric layer itself. After the insulator layer is formed on the main surface of the semiconductor sub structure, an interconnect layer having interconnect lines is formed in the insulator layer. The insulating layer is formed with an interlayer dielectric layer to cover the interconnection layer. The dielectric layer has a step or protrusion at a position corresponding to the lower interconnect line of the interconnect layer. Next, a patterned photoresist film is formed on the interlayer dielectric layer so that the pattern of the interconnect layer has an inverted geometry. Then, using the patterned photoresist film as a mask, the interlayer dielectric layer is selectively etched to partially remove the upper end of the protrusion by a prescribed depth. Then, solid particles, that is, solid particle beams are emitted to collide with the remaining protrusions of the interlayer dielectric layer to remove protrusions. |
| priorityDate | 1995-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962 |
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