| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2210-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F25J2215-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2210-0006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F25J2200-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F25J2200-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2210-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2210-0014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2210-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F25J2270-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B23-0094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F25J3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F25J3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F25J1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F25J3-02 |
| filingDate |
1997-02-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3e31ee9c0d486abcf455a5269844e63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23e0c1dc52ac91fc5cafa081a6577a58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87450dfd7bdc406ee0db1bd3ead7d16d |
| publicationDate |
2004-04-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
MY-116855-A |
| titleOfInvention |
Argon recovery from silicon crystal furnace |
| abstract |
THE PRESENT INVENTION IS DIRECTED TO TWO EMBODIMENTS OF A PROCESS FOR RECYCLING AN IMPURE ARGON EFFLUENT FROM A SILICON CRYSTAL GROWING FURNACE(18) USING CRYOGENICS. THE FIRST EMBODIMENT USES CRYOGENIC DISTILLATION TECHNIQUES, AND THE SECOND EMBODIMENT USES CRYOGENIC ADSORPTION, BOTH OF WHICH USE CATALYTIC TREATMENTS AND ADSORPTION IN CONJUNCTION WITH THEIR CRYOGENIC PROCESS STEPS TO PROVIDE A PURE ARGON RECYCLE STREAM FOR A SILICON CRYSTAL GROWTH FURNACE(18). (FIG.1) |
| priorityDate |
1996-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |