http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2010123917-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-005 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-984 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-963 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 |
| filingDate | 2008-10-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-01-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2010123917-A |
| titleOfInvention | METHOD FOR PRODUCING LARGE HOMOGENEOUS SILICON CARBIDE CRYSTALS USING SUBJECT AND CONDENSATION PROCESSES |
| abstract | 1. A method of obtaining monolithic crystals of silicon carbide, including! i) introducing a mixture containing polycrystalline silicon chips and carbon powder into a cylindrical reaction chamber having a lid; ! ii) sealing the cylindrical reaction chamber; ! iii) placing the cylindrical reaction chamber in a vacuum furnace; ! iv) evacuation of air from the furnace; ! v) filling the furnace with a mixture of gases, which are essentially inert gases, to approximately atmospheric pressure; ! vi) heating the cylindrical reaction chamber in the furnace to a temperature of from 1600 to 2500 ° C; ! vii) pressure reduction in the cylindrical reaction chamber to less than 50 torr, but not less than 0.05 torr; and! viii) sublimation and condensation of vapors on the inside of the lid of the cylindrical reaction chamber. ! 2. The method according to claim 1, where the size and shape of the particles of crumbs of polycrystalline silicon and carbon powder are significantly different. ! 3. The method according to claim 1 or 2, where the particle sizes of the chips of polycrystalline silicon are from 0.5 to 10 mm ! 4. The method according to claim 1, where the particle sizes of the chips of polycrystalline silicon are from 1 to 3.5 mm ! 5. The method according to claim 2, where the particle sizes of the chips of polycrystalline silicon are from 1 to 3.5 mm ! 6. The method according to claim 1, 2, 4 or 5, where the particle size of the carbon powder is from 5 to 125 microns. ! 7. The method according to claim 1, where the mixture of polycrystalline silicon chips and carbon powder occupies 35-50% of the total volume of the reaction chamber. ! 8. The method according to claim 1, where the mixture of gases contains argon. ! 9. The method according to claim 1, where the reaction chamber is made of conductive graphite. ! 10. The method according to claim 1, where in the reaction chamber establish a seed crystal ka |
| priorityDate | 2007-12-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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