http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2759908-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fe1b57c0f6467eff016a48a48456a03 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-14 |
| filingDate | 2020-11-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b702bb7908e8e00b94b0b459959dd571 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce4d95a0a2c327d3fc70b52e69e6438d |
| publicationDate | 2021-11-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | RU-2759908-C1 |
| titleOfInvention | Semiconductor gas-sensitive sensor |
| abstract | FIELD: gas-analyzers. n SUBSTANCE: invention relates to the analysis of materials, in particular for determining the content of hydrogen and hydrogen-containing gases and can be used in the manufacture of gas analyzers. The expected technical result is achieved in that the proposed semiconductor gas sensor, comprising: a substrate on one side of gas sensitive film, measuring electrodes placed on the gas sensitive film, the heater located on the opposite side of the substrate, while gas-sensitive tape is made of a material (In 2 O 3 ) 0,45 (Ga 2 O 3 ) 0,45 (InGaO 3 ) 0,1 . n EFFECT: increase in the sensitivity of the determination of hydrogen-containing gases 4÷10 times when the measurement range of concentrations of hydrogen-containing gases is expanded to 0.0001, vol. %, and simplification of the sensor design. n 1 cl, 1 dwg, 1 tbl |
| priorityDate | 2020-11-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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