| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7828 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2010-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60749ac06df31e86dc362f1a519761a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78f475aec34aaa68ce74116ef0f69d37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1c7434f41d5d3a762fe91bbca247c60 |
| publicationDate |
2012-06-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
SE-535294-C2 |
| titleOfInvention |
Silicon carbide semiconductor device and method for manufacturing the same |
| abstract |
Abstract. A silicon carbide semiconductor device having a JFET or a MOSFETincludes a semiconductor substrate (5), a trench (6), a channel layer (7),and a second gate region (8). The semiconductor substrate (5) has asilicon carbide substrate (1), a drift layer (2) Von the silicon carbidesubstrate (1), a first gate region (3) on the drift layer (2), and a sourceregion (4) on the first gate region (3). The trench (6) has a strip shapewith a longitudinai direction and reaches the drift layer (2) by penetratingthe source region (4) and the firstgate region (3). The channel layer (7)is formed on an inner wall of the trench (6). The second gate region (8)formed on the channel layer (7). The source region (4) is not located atan end portion of the trench (6) in the longitudinai direction. i l-28- |
| priorityDate |
2009-12-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |