http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SG-177117-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2e528b6f9ef3afd4538cb5a1faef2b7d
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
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filingDate 2011-06-24^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_804db33fe5d48e07698a4a9397cc49d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24f8fa6c7f6a2723cedb689d8b9b1778
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publicationDate 2012-01-30^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber SG-177117-A1
titleOfInvention Composition for advanced node front-and back-end of line chemical mechanical polishing
abstract COMPOSITION FOR ADVANCED NODE FRONT S AND BACK-END OF LINE CHEMICAL MECHANICAL POLISHINGThe present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2 - 3.5 for planarizing current and next generation10 semiconductor integrated circuit FEOL/BEOL substrates.Fig 4
priorityDate 2010-07-01^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635

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