http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200525633-A

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publicationDate 2005-08-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200525633-A
titleOfInvention Multi-step plasma treatment method to improve cu interconnect electrical performance
abstract A method for plasma treating an exposed copper surface and dielectric insulating layer in a semiconductor device manufacturing process including providing a semiconductor wafer having a process surface including an exposed copper portion and an exposed dielectric insulating layer portion; plasma treating in a first plasma treatment process the process surface with a first plasma including ammonia (NH3) and nitrogen (N2) plasma to form a copper nitride layer overlying the exposed copper portion; and, plasma treating in a second plasma treatment process the process surface with a second plasma including oxygen (O2).
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