| abstract |
A photoresist stripper composition, a method for forming wire structures thereby, and a method of fabricating a thin film transistor substrate using the composition. The photoresist stripper composition includes about 50 WT% to about 70 WT% of butyldiglycol, about 20 to about 40 WT% of an alkylpyrrolidone, about 1 WT % to about 10 WT% of an organic amine compound, about 1 to about 5 WT% of aminopropylmorpholine, and about 0.01 to about 0.5 WT% of a mercapto compound. |