http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200709481-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L47-00 |
| filingDate | 2006-08-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c0f127bf6e9b5c2a92431284a9d314b |
| publicationDate | 2007-03-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200709481-A |
| titleOfInvention | Phase change memory cell and method of formation |
| abstract | A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change material layer. The metal chalcogenide layer is tin-telluride. A second electrode is over the metal-chalcogenide layer. The memory element is configured to have reduced current requirements. |
| priorityDate | 2005-08-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6432000 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549771 |
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