patent/TW-200802645-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200802645-A

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filingDate	2006-10-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33664f33880adba0fd11f9b35fe0c602 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c56c3d9924db8ae5d6f37bf1399df894 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ddf453f3b2840562df7d3090d67b8c8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74239e8071da4a795a525120831cb690 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c4d3d8d47045f2093a8a35ec37c0dc5
publicationDate	2008-01-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	TW-200802645-A
titleOfInvention	Semiconductor chip with post-passivation scheme formed over passivation layer
abstract	The invention provides a semiconductor chip comprising a patterned metal layer over said passivation layer. The patterned metal layer comprises a first contact pad connected to a second contact pad exposed by an opening in a passivation layer. A metal bump is on the first contact pad and over multiple semiconductor devices, wherein the metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.
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priorityDate	2005-10-28^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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