| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-26 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 |
| filingDate |
2007-10-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3566a7764328f3d88c357edde677d50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20d1fbf1f437d1dd70c7ae9ed8c212ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee2caaa6cf005675ee354c7a2b91b059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_805b61a52fc5d2459222c901632173cf |
| publicationDate |
2008-07-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200829732-A |
| titleOfInvention |
Method for manufacturing epitaxial wafer |
| abstract |
The present invention relates to a method for manufacturing epitaxial wafer wherein generation of epitaxial defects can be decreased and an epitaxial wafer with excellent IG effect having the diameter of 300mm or more is obtained. The method comprises the steps of pulling single crystal 12 from silicon melt 11 to which boron is added by Czochralski method in chamber 21; and forming an epitaxial layer on the surface of a silicon wafer obtained by slicing the single crystal. The single crystal is grown by its passing through the temperature zone from 800 to 600 DEG C during the process of the pulling, and the passing-through thereof takes 250 to 180 minutes. The single crystal possesses an oxygen concentration of 10*10<SP>17</SP> to 12*10<SP>17</SP> atoms / cm<SP>3</SP> and a resistivity of 0.03 to 0.01 Ωcm. The wafer is subjected to a pre-annealing. That is, the wafer is held from 10 minutes to 4 hours at a predetermined temperature between 650 to 900 DEG C in an inert atmosphere before forming the epitaxial layer on the surface of the silicon wafer thereof. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113862777-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113862791-A |
| priorityDate |
2006-11-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |