| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-82 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-82 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate |
2008-04-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cff3f5581a1013a9427d08d9435ffc4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf60a91b4444f02a446c114aeefb85bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c430706c6daddd7ed0825960d3d9b6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f05b0a3af985f4b5ad0c7df516a6746e |
| publicationDate |
2009-11-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200945648-A |
| titleOfInvention |
Oganic thin film transistor and pixel and method for manufacturing the same and display panel |
| abstract |
A method of manufacturing an organic thin film transistor is described. A patterned insulating layer having an opening therein is formed on a substrate. A gate is formed in the opening of the insulating layer, and a gate insulating layer is formed on the gate. A material layer is formed on the gate insulating layer by performing a printing step, wherein one of the gate insulating layer and the material layer is hydrophobic or hydrophilic and the other is hydrophilic or hydrophobic, such that the material layer is naturally separated to two sides of the gate insulating layer to form a source and a drain. An active layer is formed on the gate insulating layer between the source and the drain. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103779354-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I599084-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8766267-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I423310-B |
| priorityDate |
2008-04-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |