| abstract |
A light emitting diode is provided, which comprises a light emitting portion including a light emitting layer having a compositional formula of (AlxGa1-x)y In1-yP (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), and the light emitting portion including the light emitting layer is joined to a transparent substrate. The light emitting diode comprises a first electrode at a main light emitting surface, and a second electrode having a different polarity from the first electrode. The second electrode is formed on a semiconductor layer located opposite to the first electrode intervening the light emitting layer. A side wall of the transparent substrate is defined by a first side wall, which is near the light emitting layer, and a second side wall which is far from the light emitting layer, wherein the first wall is perpendicular to the light emitting layer and the second wall is inclined. A third electrode is provided on the rear side of the transparent substrate. The thus formed light emitting diode provides a high-brightness light emitting diode having a high light emitting efficiency and also having a highly productive mounting process. |