| abstract |
A semiconductor device comprises a semiconductor substrate, a through contact and a metal film. The semiconductor substrate has a semiconductor element at a first face. The wiring pattern includes a grounding line and is located at a side of a second face opposite to the first face of the semiconductor substrate. The through contact penetrates the semiconductor substrate from the first face to the second face and electrically connects between the semiconductor element and the wiring pattern. The metal film is located between the second face of the semiconductor substrate and a face where the wiring pattern exists and electrically connected with the grounding line. |