http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201130196-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_435f7fafc4b931eae59de228af7272de |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0021 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate | 2010-07-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84e7a60eb4b23d047c63c6f23020c45c |
| publicationDate | 2011-09-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201130196-A |
| titleOfInvention | Nitride semiconductor laser diode |
| abstract | A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including InxAlyGa1-x-yN (0 < x < 1, 0 ≤ y < 1, 0 < x+y < 1), and a p-side nitride semiconductor layer formed on the active layer. The lasing wavelength of the nitride semiconductor laser diode is 500 nm or longer. Dislocations originated in the active layer thread through the p-side nitride semiconductor layer, with the dislocation density in the p-side nitride semiconductor layer being 1x10<SP>6</SP>cm2 or larger. The concentration distribution of p-type dopants in the depth direction is such that, from the light emitting layer toward the surface of the p-side nitride semiconductor layer, the concentration of the p-type dopant reaches a maximum value of 5x10<SP>18</SP>cm<SP>-3</SP> or more within a range of 300 nm from the top portion of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after reaching the maximum value, the concentration remains at 6x10<SP>17</SP>cm<SP>-3</SP> or more in the above-described range of 300 nm. |
| priorityDate | 2009-07-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
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