http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201134040-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| filingDate | 2010-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04460be8e6640d606e0d45d59f20e7d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e29e1a87ad842ac06c082a9f7bb81a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d9e70b0ba9803d5250f930dbc333ded http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_614823781495ee63e4661f0b27a53ae1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0709cd6763214baa0ac11f7a7b9dd937 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6a99ef53c4bb76fc4a8681c6b82ca09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b157d88743a75b76fb4d31e322781dd3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb9c65e4b3d3c8af59f2c76dab0752b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_283540d613ef1ffb5af336d03002ab16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df416c33db6c7362a5309ffd57e431d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c923a7f972a580119d4765887d09f03b |
| publicationDate | 2011-10-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201134040-A |
| titleOfInvention | Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and epitaxial substrate |
| abstract | A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which comprises a hexagonal III-nitride semiconductor and has a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and an axis normal to the semipolar primary surface. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. An angle ALPHA between the normal axis and the c-axis of the hexagonal III-nitride semiconductor is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes a laser waveguide extending above the semipolar primary surface, and the laser waveguide extends in a direction of a waveguide vector directed from one to another of the first and second fractured faces. A c-axis vector indicating a direction of the c-axis of the hexagonal III-nitride semiconductor includes a projected component parallel to the semipolar primary surface and a vertical component parallel to the normal axis. An angle difference between the waveguide vector and the projected component is in the range of not less than -0.5 degrees and not more than +0.5 degrees. |
| priorityDate | 2009-12-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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