http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201229063-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_716e9a2606ffd4ba1a2a3917e4a402fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cebc9740ef706cde29e885504f274ffa |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-38 |
| filingDate | 2011-11-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b3f03d0273218be2a8e7cddc7295dde http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46fdc1482b035e89e97ef9ec7f737cae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcff521e8b32061e31ac9195ae936583 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23da015dd16e466830d106c3f5b4f6e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e657ccd961589cd060d1222d376e10a |
| publicationDate | 2012-07-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201229063-A |
| titleOfInvention | Polymer for lithography and method for manufacturing the same, semiconductor resist resin, and method for manufacturing substrate with pattern formed thereon |
| abstract | A polymer for lithography, a method for manufacturing the same and a semiconductor resist resin containing the same are provided. The polymer for lithography has good polymerization conversion rate and the molecular weight of which is uniformly controlled. The polymer for lithography is formed by not using metal catalysts or polymerization inhibitors, wherein synthesis of which is more complex, and polymerizing a monomer component including a vinyl group having an acid dissociating group. In a method for manufacturing the polymer for lithography, a mixture including the following components (A) to (C) are used, and by conducting the polymerization of component (A) at a polymerization temperature of no more than 55 DEG C, the polymer for lithography is obtained: (A) a monomer component including a vinyl group having an acid dissociating group, (B) an organic iodine compound, and (C) radical polymerization initiator. The polymer for lithography obtained by the manufacturing method and a semiconductor resist resin containing the polymer are provided. |
| priorityDate | 2010-11-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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