| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate |
2012-10-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a75ff6b36474f63ab478cded2d527d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bf19ca0a734336b841b08fecaf28e57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d32b213ace30e5a1a416b6b8f0c4a92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b703c5c7fcdf00ab91a45cd55b1e2f37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aae8b2bef16ed1a5f4c0fbc3f7d439df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9a207d7d26667715502de04fccf6b75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b938b86ab270046df141bf4e5c0e3f24 |
| publicationDate |
2013-05-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201318292-A |
| titleOfInvention |
Nitride semiconductor light-emitting element |
| abstract |
The present invention can provide a nitride semiconductor light-emitting element having a structure capable of reducing lateral diffusion of a carrier from a semiconductor ridge. The semiconductor laser on the {20-21} surface generates a two-dimensional electric cavity gas on the hole belt by the heterojunction. When the heterojunction generating the two-dimensional cavity gas deviates from the position of the semiconductor ridge, the two-dimensional cavity gas is caused to diffuse laterally of the carrier in the semiconductor region on the p side. On the other hand, the semiconductor laser on the c-plane does not generate two-dimensional hole gas on the hole belt by the heterojunction. When the heterojunction HJ is included in the semiconductor ridge, there is no lateral diffusion due to the action of the two-dimensional hole gas in the carrier flowing out of the semiconductor ridge. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I605613-B |
| priorityDate |
2011-10-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |