| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a62f210dd242209f9ffbe071c58e0e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2012-12-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a91e84167098f1532cbca9a1e023e4d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5acce00f951d8a9d20a134ac89106fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c2aa8abac17b5836442c056de068f0f |
| publicationDate |
2013-07-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201327841-A |
| titleOfInvention |
Thin film transistor and method for manufacturing thin film transistor |
| abstract |
[Problem] The present invention achieves high performance of a thin film transistor in which an oxide is applied to a gate insulating layer, or simplification and energy saving of a manufacturing process of such a thin film transistor. [Means for Solving] A thin film transistor 100 of the present invention includes a first oxide layer 32 composed of lanthanum (La) and tantalum (Ta) between the gate electrode 20 and the channel 52 (which may contain unavoidable Impurity), the first oxide layer has a surface 32a: a precursor solution containing a precursor of lanthanum (La) and a precursor containing ruthenium (Ta) as a solute as a starting material and a precursor layer The person formed after exposure to hydrochloric acid vapor. Further, the surface 32a of the first oxide layer 32 of the thin film transistor is in contact with the channel 52. |
| priorityDate |
2011-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |