| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de498babb0c04a00ceb653738877b147 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F5-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F5-066 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F5-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-20 |
| filingDate |
2012-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec1251d19b8212592450a23389f44c77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a384b0dd8bc9e7c236ae673d124a708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d5970396700a1ab3d852e80153ae91e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9622cbb20b7286d957b691f3de6feaf3 |
| publicationDate |
2013-07-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201329092-A |
| titleOfInvention |
Aluminum compound, raw material for film formation, and method for producing film |
| abstract |
The present invention relates to an aluminum compound represented by the following chemical formula (I), a raw material for forming a film containing the aluminum compound, and a method for producing a film, which is obtained by vaporizing a raw material for forming a thin film. The vapor containing the aluminum compound obtained is introduced into a film forming chamber provided with a substrate, and the aluminum compound is decomposed and/or chemically reacted to form a film containing aluminum on the surface of the substrate. The raw material for forming a film of the present invention is particularly suitable as a raw material for chemical vapor deposition because the physical properties of the aluminum compound as a precursor are suitable for the CVD method or the ALD method. □ |
| priorityDate |
2012-01-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |