| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-504 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
| filingDate |
2012-08-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d900582eaab5958c6974945bcb640b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c4658469a20abd5ff2651dde207650e |
| publicationDate |
2013-07-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201330328-A |
| titleOfInvention |
Vertical solid state converter with back terminal and related system and method |
| abstract |
A vertical solid state converter ("SST") having a back contact is disclosed. According to a particular embodiment, the SST may comprise a converter structure having a first semiconductor material at a first side of the SST, a second side of the SST opposite the first side An active region between the second semiconductor material and the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact may be covered by a dielectric material and a portion may be exposed to the dielectric material to maintain exposure. A conductive carrier substrate can be disposed on the dielectric material. An isolated via may extend through the conductive carrier substrate to reach the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically connectable from the first side. |
| priorityDate |
2011-08-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |