| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C233-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C233-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2013-01-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56d291aa4859ae2a8cd53674557ffe56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74b9cf9bfa8519bd4a6495f74ab92a6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eac66593f863a9f290ced4bc56629af8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01cd19963303720d983c66c36402f1e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb69358c7a37eff2c60cf0459f62b678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c555b4775438c7f68d1989c240e895d |
| publicationDate |
2013-09-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201335119-A |
| titleOfInvention |
Method for producing impurity-diffused layer forming composition, semiconductor substrate with impurity diffusion layer, and method for manufacturing solar cell element |
| abstract |
The present invention provides an impurity diffusion layer forming composition comprising: a compound containing a donor element or a compound containing an acceptor element, a dispersion medium, and a fatty acid decylamine. In addition, the present invention provides a method of fabricating a semiconductor substrate with an impurity diffusion layer, comprising: applying the impurity diffusion layer forming composition on all or a portion of the semiconductor substrate to form an impurity diffusion layer forming composition layer And a step of performing heat treatment on the semiconductor substrate on which the impurity layer composition layer is formed. |
| priorityDate |
2012-02-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |