http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201423931-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0264 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0064 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 |
filingDate | 2013-10-31^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b8f4b3225125f2cfa936eb24b174ccf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbda43f4b0fb77f16dccea87f8d39b0e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bc9458dedd474d0c0d32ac54b525533 |
publicationDate | 2014-06-16^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201423931-A |
titleOfInvention | Surface charge relaxation layer for MEMS sensors |
abstract | The present invention provides a semiconductor device including a substrate. At least one sensor will be provided on the substrate. The at least one sensor includes at least one electrically conductive circuit component. A dielectric layer is deposited over the substrate over the at least one sensor. A surface charge relaxation layer formed of a conductor material is deposited on the outer surface of the dielectric layer, and the surface charge relaxation layer is electrically coupled to the ground potential. The surface charge relaxation layer can be deposited to a thickness of 10 nm or less, and the sensor can include a microelectromechanical system (MEMS) device, such as a MEMS pressure sensor. The surface charge relaxation layer may be patterned to include pores in order to increase the flexibility and optical properties of the relaxation layer. |
priorityDate | 2012-11-01^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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